The SPD08N50C3 is a N-channel MOSFET manufactured by Infineon Technologies.

• Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current: 7.6A @ 25°C
• Maximum Rds On at Id,Vgs: 600 mOhm @ 4.6A, 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 3.9V @ 350μA
• Maximum Gate Charge: 32nC @ 10V
• Maximum Input Capacitance: 750pF @ 25V
• Packaging: PG-TO252-3-1 packaging
• Halogen-Free Standards: compliant with halogen-free standards.
• Market Status: in the open market.
• Supply and Demand Status: balanced
• Estimated EOL Date: 2022