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Same model may have multiple batches, images only for reference.
SPD30N03S2L-10G Real Image
Same model may have multiple batches, images only for reference.

SPD30N03S2L-10G

Part No SPD30N03S2L-10G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO252-3
Datasheet
SPD30N03S2L-10G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 50μA
Max Gate Charge 41.8nC @ 10V
Max Input Capacitance 1550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 042829-SPD30N03S2L-10G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD30N03S2L-10G CAD Model

Description

The Infineon SPD30N03S2L-10G is an N-channel MOSFET transistor designed for general-purpose applications.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 30A @ 25°C
  • Maximum On-Resistance: 10 mOhm @ 30A and 10V
  • Package: PG-TO252-3 package with TO-252-3 dimensions.
  • Status: obsolete (EOL)
  • Popularity: medium popularity in the market.

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