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SPD30N03S2L07GBTMA1

Part No SPD30N03S2L07GBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 85μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 2530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 6.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101550-SPD30N03S2L07GBTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPD30N03S2L07GBTMA1 CAD Model

Description

The Infineon Technologies SPD30N03S2L07GBTMA1 is an N-channel MOSFET transistor that comes in a PG-TO252-3 package. It has a drain-source breakdown voltage of 30V and a continuous drain current of 30A @ 25°C.

  • Gate-Source Threshold Voltage: 2V @ 85μA
  • Maximum Gate Charge: 68nC @ 10V
  • Maximum Input Capacitance: 2530pF @ 25V
  • Maximum Rds On @ Id,Vgs: 6.7 mOhm @ 30A, 10V
  • Suitable for: Discrete Semiconductor Products
  • Mounting Technology: SMD (SMT)
  • Power Dissipation: 136W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0326 $61.9560
140+ $0.8473 $118.6220
215+ $0.8209 $176.4935
295+ $0.7943 $234.3185
380+ $0.7678 $291.7640
505+ $0.6884 $347.6420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,800 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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