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SPD30N08S2L-21

Name: SPD30N08S2L-21
Brand: Infineon Technologies
SKU: 518343
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SPD30N08S2L-21
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 75V 30A DPAK
Datasheet	SPD30N08S2L-21 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	75V
Continuous Drain Current at 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2V @ 80μA
Max Gate Charge	72nC @ 10V
Max Input Capacitance	2130pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	136W (Tc)
Maximum Rds On at Id,Vgs	20.5 mOhm @ 25A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	P-TO252-3
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	1101554-SPD30N08S2L-21
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian SPD30N08S2L-21 CAD Model

Alternative Products

Description

The SPD30N08S2L-21 is a high-performance N-channel MOSFET designed for use in discrete semiconductor products by Infineon Technologies.

Drain-Source Breakdown Voltage: 75V
Continuous Drain Current (25°C): 30A
Package: P-TO252-3
Maximum Power Dissipation: 136W
Product Status: Obsolete (EOL)
Popularity: Medium
Supply and Demand: Limited

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