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SPI12N50C3XKSA1

Part No SPI12N50C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560 V
Current - Continuous Drain (Id) @ 25°C 11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI12N
Other Names IFEINFSPI12N50C3XKSA1,SPI12N50C3IN,SPI12N50C3IN,SPI12N50C3,SPI12N50C3X,SP000680996,2156-SPI12N50C3XKSA1-IT,SPI12N50C3,SPI12N50C3XK
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278344-SPI12N50C3XKSA1
Ultra Librarian 3D Model Ultra Librarian SPI12N50C3XKSA1 CAD Model

Description

The SPI12N50C3XKSA1 is a N-Channel MOSFET transistor from the CoolMOS™ series of Infineon Technologies.

  • Drain to Source Voltage (Vdss): 560 V
  • Continuous Drain Current (Id): 11.6A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • Power Dissipation: 125W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: Through-hole
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Status: Obsolete

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