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SPI20N60C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPI20N60C3XKSA1

Part No SPI20N60C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.7A TO-262
Datasheet
SPI20N60C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 13.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 128552-SPI20N60C3XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPI20N60C3XKSA1 CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel device with a maximum power dissipation of 208W (Tc).

  • GPTDescription: The supply and demand status is balanced.
  • GPTDescription: This component is designed for discrete semiconductor products and is mounted using through-hole technology.
  • GPTDescription: It is active and has a temperature range of -55°C to 150°C (TJ).
  • GPTDescription: The Win Source Part Number for this component is 128552-SPI20N60C3XKSA1.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.3917 $64.7004
30+ $4.4241 $132.7230
46+ $4.2870 $197.2020
63+ $4.1486 $261.3618
81+ $4.0102 $324.8262
108+ $3.5949 $388.2492
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