The Infineon Technologies 065947-SPP02N60S5 is a N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 1.8A @ 25°C.

• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 1.8A @ 25°C
• Maximum Rds On: 3 Ohm @ 1.1A and 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 5.5V @ 80μA
• Package: PG-TO220-3-1 case
• Dimension: TO-220-3
• Maximum Input Capacitance: 240pF @ 25V
• Maximum Gate Charge: 9.5nC @ 10V
• Suitable for: Use in applications where a high breakdown voltage and a low on-resistance are required
• Status: Obsolete (EOL)
• Supply and Demand Status: Limited