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Same model may have multiple batches, images only for reference.
SPP08P06PBKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP08P06PBKSA1

Part No SPP08P06PBKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPP08P06PBKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series SIPMOS®
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V
Power Dissipation (Max) 42W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number SPP08P
Other Names SPP08P06PIN,SPP08P06PXTIN,SPP08P06P,SPP08P06PIN,SPP08P06PXTIN,SP000012085,SPP08P06PX,SPP08P06PXK,SPP08P06PINR
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278266-SPP08P06PBKSA1
Ultra Librarian 3D Model Ultra Librarian SPP08P06PBKSA1 CAD Model

Description

The Infineon Technologies SPP08P06PBKSA1 is a through-hole MOSFET transistor that has a drain-source voltage of 60V and a continuous drain current of 8.8A.

  • On-Resistance: 300mOhm @ 6.2A and a gate-source voltage of 4V @ 250µA
  • Power Dissipation: 42W
  • Operating Temperature: -55°C to 175°C
  • Package: TO-220-3
  • Standard Package: 500

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