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SPP11N60C3

Part No SPP11N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 091245-SPP11N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SPP11N60C3
Introduction Date August 23, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian SPP11N60C3 CAD Model

Description

The Infineon Technologies 091245-SPP11N60C3 is an N-channel MOSFET transistor designed for use in power management applications.

  • Maximum Power Dissipation: 125W
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 11A
  • Gate-Source Threshold Voltage: 3.9V @ 500μA
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 7A, 10V
  • Package: PG-TO220-3-1
  • Mounting: Through-hole technology
  • Product Status: Active
  • Popularity: High
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4141 $56.5640
90+ $1.1603 $104.4270
135+ $1.1241 $151.7535
185+ $1.0878 $201.2430
240+ $1.0516 $252.3840
320+ $0.9428 $301.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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