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Same model may have multiple batches, images only for reference.
SPP11N60S5HKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP11N60S5HKSA1

Part No SPP11N60S5HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A TO-220AB
Datasheet
SPP11N60S5HKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 500μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 1460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 119872-SPP11N60S5HKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP11N60S5HKSA1 CAD Model

Description

The Infineon Technologies SPP11N60S5HKSA1 is an N-Channel MOSFET device that is perfect for use in various electronic devices.

  • Packaging Format: Tube/rail
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 11A (Tc)
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 7A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 125W (Tc)
  • Applications: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1282 $59.4358
46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
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Availability: 40 pieces
MOQ: 19 pcs
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