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Same model may have multiple batches, images only for reference.
SPP16N50C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP16N50C3XKSA1

Part No SPP16N50C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 16A TO-220AB
Datasheet
SPP16N50C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 103869-SPP16N50C3XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP16N50C3XKSA1 CAD Model

Description

The Infineon Technologies SPP16N50C3XKSA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 560V.

  • Drain-Source Breakdown Voltage: 560V
  • Applications: Power supplies, motor control, and DC-DC converters
  • Continuous Drain Current: 16A (Tc)
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 675μA
  • Maximum Gate Charge: 66nC @ 10V
  • Maximum Input Capacitance: 1600pF @ 25V
  • Package: TO-220-3
  • Halogen-Free Compliant: Yes

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147+ $1.9751 $290.3397
196+ $1.7706 $347.0376
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Availability: 14,300 pieces
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