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Same model may have multiple batches, images only for reference.
SPP21N10 Real Image
Same model may have multiple batches, images only for reference.

SPP21N10

Part No SPP21N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 21A TO-220AB
Datasheet
SPP21N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 44μA
Max Gate Charge 38.4nC @ 10V
Max Input Capacitance 865pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101624-SPP21N10
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Automotive
Ultra Librarian 3D Model Ultra Librarian SPP21N10 CAD Model

Description

The SPP21N10 is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (Id) @ 25°C: 21A (Tc)
  • Maximum Rds On @ Id, Vgs: 80 mOhm @ 15A, 10V
  • Max Gate Charge: 38.4nC @ 10V
  • Mounting: Through-Hole
  • Package: PG-TO220-3-1
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1311 $62.2105
125+ $0.9282 $116.0250
195+ $0.8992 $175.3440
270+ $0.8702 $234.9540
345+ $0.8411 $290.1795
460+ $0.7541 $346.8860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 450 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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