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Same model may have multiple batches, images only for reference.
SPP24N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP24N60C3

Part No SPP24N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24.3A TO-220
Datasheet
SPP24N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1.2mA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 240W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 15.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 089696-SPP24N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP24N60C3 CAD Model

Description

The Infineon Technologies 089696-SPP24N60C3 is a N-Channel MOSFET that is designed for use in discrete semiconductor products. The 089696-SPP24N60C3 is a N-Channel MOSFET from Infineon Technologies that is designed for use in discrete semiconductor products.

  • Package: TO-220-3
  • Drain-Source Breakdown Voltage: 650V
  • Maximum Continuous Drain Current: 24.3A (Tc) @ 25°C
  • Maximum Rds On: 160 mOhm @ 15.4A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 1.2mA
  • Maximum Gate Charge: 135nC @ 10V
  • Maximum Input Capacitance: 3000pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 240W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)

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