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Same model may have multiple batches, images only for reference.
SPP47N10L Real Image
Same model may have multiple batches, images only for reference.

SPP47N10L

Part No SPP47N10L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 47A TO-220
Datasheet
SPP47N10L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 2mA
Max Gate Charge 135nC @ 10V
Max Input Capacitance 2500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 175W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101627-SPP47N10L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPP47N10L CAD Model

Description

The Infineon Technologies SPP47N10L is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 47A @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 47A @ 25°C
  • Applications: Discrete semiconductor products
  • Package: PG-TO220-3-1
  • Maximum Power Dissipation: 175W
  • Maximum Rds On: 26 mOhm @ 33A and 10V
  • Gate-Source Threshold Voltage: 2V @ 2mA
  • Maximum Gate Charge: 135nC @ 10V
  • Suitability: Applications that require a high voltage and current capacity

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