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Same model may have multiple batches, images only for reference.
SPP73N03S2L-08 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP73N03S2L-08

Part No SPP73N03S2L-08
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 73A TO-220AB
Datasheet
SPP73N03S2L-08 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 55μA
Max Gate Charge 46.2nC @ 10V
Max Input Capacitance 1710pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 042834-SPP73N03S2L-08
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP73N03S2L-08 CAD Model

Description

The Infineon Technologies 042834-SPP73N03S2L-08 is a MOSFET transistor in N-Channel polarity. The 042834-SPP73N03S2L-08 from Infineon Technologies is a MOSFET transistor in N-Channel polarity.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 73A @ 25°C
  • Maximum Rds on: 8.4 mOhm @ 36A, 10V
  • Case/Package: PG-TO220-3-1
  • Dimensions: TO-220-3
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2V @ 55μA
  • Maximum Gate Charge: 46.2nC @ 10V
  • Maximum Input Capacitance: 1710pF @ 25V
  • Status: Obsolete(EOL)

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