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SPP80N04S2L-03

Part No SPP80N04S2L-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO-220
Datasheet
Sample
Rohs State Need to verify
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 213nC @ 10V
Max Input Capacitance 7930pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065969-SPP80N04S2L-03
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP80N04S2L-03 CAD Model

Description

The Infineon Technologies SPP80N04S2L-03 is an N-Channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 80A @ 25°C. The SPP80N04S2L-03 from Infineon Technologies is an N-Channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 80A @ 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A @ 25°C
  • Power Dissipation: 300W (Tc)
  • Maximum Gate Charge: 213nC @ 10V
  • Maximum Input Capacitance: 7930pF @ 25V
  • Mounting: Through hole
  • Package: PG-TO220-3-1

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