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Same model may have multiple batches, images only for reference.
SPU18P06P Real Image
Same model may have multiple batches, images only for reference.

SPU18P06P

Part No SPU18P06P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 18.6A TO-251
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 860pF @ 25V
Maximum Gate-Source Voltage ±20V
Maximum Rds On at Id,Vgs 130 mOhm @ 13.2A, 10V
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1101652-SPU18P06P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPU18P06P CAD Model

Description

The Infineon Technologies SPU18P06P is a high-performance P-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 18.6A @ 25°C
  • Package: PG-TO251-3
  • Maximum Power Dissipation: 136W
  • Product Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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