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SPU30N03S2L-10

Part No SPU30N03S2L-10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO-251
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 50μA
Max Gate Charge 39.4nC @ 10V
Max Input Capacitance 1460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 82W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package P-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1101654-SPU30N03S2L-10
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPU30N03S2L-10 CAD Model

Description

The Infineon Technologies MOSFET is a N-channel type with a drain-source breakdown voltage of 30V.

  • Manufacturer: Infineon Technologies
  • Product: MOSFET
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 82W (Tc)
  • Continuous Drain Current: 30A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 50μA
  • Maximum Gate Charge: 39.4nC @ 10V
  • Case/Package: P-TO251-3
  • Lifecycle Status: Obsolete (EOL)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Popularity: Not popular
  • Supply and Demand: Sufficient

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