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Same model may have multiple batches, images only for reference.
SPW55N80C3FKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPW55N80C3FKSA1

Part No SPW55N80C3FKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 54.9A TO-247
Datasheet
SPW55N80C3FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS C3
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 54.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.9V @ 3.3mA
Gate Charge (Qg) (Maximum) @ Vgs 288nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7520pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 500W (Tc)
Rds On (Maximum) @ Id, Vgs 85 mOhm @ 32.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO247-3
Package TO-247-3
Win Source Part Number 764052-SPW55N80C3FKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name SPW55N80C3
Introduction Date October 12, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SPW55N80C3FKSA1 CAD Model

Description

{"ProductId":702430,"FormattedDescription":"

The Infineon SPW55N80C3FKSA1 is a medium popularity electronic component with limited supply and demand status.

  • Series: CoolMOS C3
  • Package: TO-247-3
  • Maximum Drain Source Voltage: 800V
  • Current Continuous Drain @ 25°C: 54.9A (Tc)
  • Power Dissipation: 500W (Tc)
  • Estimated EOL Date: 2027
"}

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