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83CNQ100APBF

Part No 83CNQ100APBF
Manufacturer International Rectifier
Catalog Diodes, Rectifiers - Arrays
Description SCHOTTKY RECTIFIER New GenIII D-61 Package
Sample
Rohs State rohs
ECAD Module
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1133954-83CNQ100APBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 83CNQ100APBF CAD Model

Description

The 83CNQ100APBF is a high-current Schottky Rectifier module from International Rectifier. It is designed to offer efficient rectification in high-frequency switching power supplies and similar applications. It features a low forward voltage drop, which minimizes power dissipation and improves system efficiency. The 'AP' designation often implies a specific package modification or performance characteristic, in this instance referring to its robust construction. The 'PBF' suffix indicates that the device is lead-free and compliant with RoHS standards.

Applications:

  • Output rectification in high-frequency SMPS
  • Freewheeling diodes in converters and inverters
  • Polarity protection
  • Renewable energy systems (solar inverters, wind turbines)
  • Welding power supplies

Features:

  • Low forward voltage drop for reduced power loss
  • High surge current capability for reliable operation
  • High-frequency operation for efficient switching
  • Guard ring for overvoltage protection
  • RoHS compliant (lead-free)
  • Isolated Base

Benefits:

  • Increased system efficiency due to low forward voltage drop
  • Reduced heat generation, allowing for more compact designs
  • Enhanced reliability and extended lifespan
  • Suitable for high-frequency applications
  • Environmentally friendly due to RoHS compliance
  • Improved thermal performance with isolated base

Additional Details:

The 83CNQ100APBF features a maximum average forward current of 83 Amperes. It has a maximum repetitive peak reverse voltage of 100 Volts. The operating junction temperature range typically spans from -55°C to +150°C. The device is typically packaged in a TO-247 package, allowing for efficient heat dissipation. The Schottky barrier construction minimizes the forward voltage drop compared to traditional silicon diodes, improving efficiency, especially at higher frequencies. The high surge current capability ensures reliable performance under transient conditions. The isolated base provides enhanced thermal management and electrical isolation, which are crucial in demanding applications. It's specifically designed for applications that need high current capacity and voltage capabilities combined with robust construction and adherence to environmental regulations.

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