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Same model may have multiple batches, images only for reference.
AUIRFR4105 International Rectifier
Same model may have multiple batches, images only for reference.

AUIRFR4105

Part No AUIRFR4105
Manufacturer International Rectifier
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET N CHANNEL / N-Channel 55 V 20A (Tc) 68W (Tc) Surface Mount D-Pak
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr International Rectifier
Series HEXFET®
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status Not applicable
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Other Names INFIRFAUIRFR4105,2156-AUIRFR4105
Standard Package 1
Win Source Part Number 1047088-AUIRFR4105
Ultra Librarian 3D Model Ultra Librarian AUIRFR4105 CAD Model

Description

The International Rectifier AUIRFR4105 is a MOSFET used in discrete semiconductor products.

  • Type: N-Channel FET
  • Maximum drain to source voltage: 55V
  • Power dissipation: 68W
  • Mounting: SMD (SMT) technology
  • MSL level: 1 (Unlimited)
  • REACH: unaffected
  • HTSUS: 0000.00.0000

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