The IRF7805ZGPBF is a DirectFET® power MOSFET from International Rectifier, designed for high-frequency synchronous rectification and DC-DC conversion applications. It offers exceptional efficiency and thermal performance in a compact footprint.

Applications

• Synchronous Rectification in Power Supplies
• DC-DC Converters
• Voltage Regulator Modules (VRMs)
• High-Frequency Switching Applications
• Point-of-Load (POL) Converters

Features

• Low On-Resistance (RDS(on)): Reduces conduction losses and improves efficiency.
• Low Gate Charge (Qg): Minimizes switching losses at high frequencies.
• DirectFET® Package: Provides excellent thermal performance and a small footprint.
• Optimized for Synchronous Rectification: Enhances efficiency in synchronous rectifier circuits.
• Lead-Free: Compliant with environmental regulations.

Benefits

• High Efficiency: Low RDS(on) and low gate charge minimize power dissipation.
• Compact Design: DirectFET® package allows for space-saving designs.
• Superior Thermal Performance: Efficient heat dissipation enables higher power densities.
• Improved Reliability: Robust design ensures stable operation in demanding applications.
• Environmentally Friendly: Lead-free construction supports green initiatives.

Additional Details

The IRF7805ZGPBF features a VDS (Drain-Source Voltage) rating of 30V and a continuous drain current (ID) rating of 13A. Its RDS(on) is typically 4.5 milliohms at a gate-source voltage of 10V. The DirectFET® package provides a very low thermal resistance from junction to case, allowing for efficient heat transfer. This MOSFET is particularly well-suited for synchronous rectification in high-frequency DC-DC converters used in servers, telecom equipment, and voltage regulator modules (VRMs). Its low gate charge reduces switching losses, making it ideal for high-frequency applications. The IRF7805ZGPBF is designed to minimize both conduction and switching losses, enabling designers to achieve higher power densities and improved overall system efficiency. The operating junction temperature range is -55°C to +175°C. The device’s optimized static and dynamic characteristics ensure reliable operation in demanding power management solutions.