The IRG7I313UPBF is an insulated gate bipolar transistor (IGBT) from International Rectifier, designed for high-efficiency power switching applications. This device combines the advantages of both MOSFETs and bipolar transistors, offering high input impedance and low on-state conduction losses, making it suitable for demanding power electronics applications.

Applications

• Uninterruptible Power Supplies (UPS)
• Welding equipment
• Induction heating
• Power factor correction (PFC) circuits
• Solar inverters
• Motor control drives

Features

• High speed switching
• Low VCE(on) trench IGBT technology
• Optimized for high frequency operation (8-40 kHz)
• Square RBSOA
• Maximum junction temperature of 175°C
• Lead-free, RoHS compliant

Benefits

• Improved efficiency in power conversion systems due to low conduction and switching losses
• Increased system reliability due to robust design and high operating temperature capability
• Simplified thermal management because of low power dissipation
• Reduced EMI emissions due to controlled switching characteristics
• Environmentally friendly due to lead-free and RoHS compliance

Additional Details

The IRG7I313UPBF is typically used in applications requiring fast switching speeds and high current handling capabilities. Its low VCE(on) characteristic minimizes power dissipation, resulting in cooler operation and higher overall system efficiency. The device's robust design ensures reliable performance even under harsh operating conditions. The device is available in a TO-220 package. The maximum collector current is 48A. The gate-emitter voltage is +/- 20V.