The IRS21856S is a high-voltage, high-speed power MOSFET and IGBT gate driver from International Rectifier (now Infineon Technologies). It's designed to drive two independent high-side and low-side referenced output channels. The logic inputs are compatible with standard CMOS or LSTTL outputs. This gate driver is well-suited for applications requiring efficient and reliable control of power semiconductors.

Applications:

• Motor Drives: Driving MOSFETs or IGBTs in motor control applications, including BLDC motors and servo drives.
• Power Supplies: Gate driving in SMPS (Switch Mode Power Supplies) and UPS (Uninterruptible Power Supplies).
• Lighting Ballasts: Driving power switches in electronic ballasts for fluorescent and LED lighting.
• Induction Heating: Controlling the power switches in induction heating systems.
• Welding Equipment: Driving the power devices in welding inverters.

Features:

• Floating Channel Designed for Bootstrap Operation: Simplifies high-side gate drive.
• Gate Drive Supply Range from 10V to 20V: Flexible operating voltage range.
• Logic Input Compatible with CMOS or LSTTL Outputs: Easy interface with control circuitry.
• Shoot-Through Protection: Prevents simultaneous conduction of high-side and low-side MOSFETs.
• Matched Propagation Delay for Both Channels: Minimizes dead-time and improves efficiency.
• Under-Voltage Lockout (UVLO) for Both Channels: Protects the power devices from operating at insufficient gate drive voltage.

Benefits:

• Simplified Design: Integration of gate drive functions simplifies circuit design.
• Improved Efficiency: Accurate timing and shoot-through protection enhance efficiency.
• Enhanced Reliability: Protection features safeguard the gate driver and power devices.
• Flexibility: Wide operating voltage range and logic compatibility provide design flexibility.
• Reduced Component Count: Integrated design reduces the number of external components required.

Additional Details:

The IRS21856S can provide a typical source current of 350mA and sink current of 650mA. It operates with a maximum supply voltage of 600V. The propagation delay is typically 95ns. This gate driver utilizes a bootstrap circuit for the high-side drive, simplifying the design and reducing component count. The input logic is compatible with both CMOS and LSTTL levels, allowing for easy interface with various control platforms. Protection features such as shoot-through prevention and undervoltage lockout enhance the reliability and robustness of the system. The SOIC-8 package offers a compact footprint for space-constrained applications.