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JANSR2N7268

Part No JANSR2N7268
Manufacturer International Rectifier
Catalog Transistors - FETs, MOSFETs - RF
Description RADIATION HARDENED POWER MOSFET THRU-HOLE
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1191407-JANSR2N7268
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANSR2N7268 CAD Model

Description

The JANSR2N7268 is a radiation-hardened N-channel MOSFET manufactured by International Rectifier (now Infineon). It's designed for applications requiring high reliability and resistance to radiation, such as space applications and high-energy physics experiments. This MOSFET provides robust performance in harsh environments.

Applications:

  • Spacecraft electronics
  • Satellite systems
  • High-altitude aircraft
  • High-energy physics experiments
  • Nuclear power plants

Features:

  • Radiation hardened: Withstands high levels of ionizing radiation without significant degradation in performance.
  • Low RDS(on): Minimizes conduction losses and improves efficiency.
  • Fast switching speed: Reduces switching losses and enhances system performance.
  • Avalanche energy rated: Can withstand high avalanche energy without damage.
  • Hermetically sealed package: Provides excellent environmental protection.

Benefits:

  • Reliable operation in radiation environments: Radiation hardening ensures reliable operation in space and other high-radiation environments.
  • Higher efficiency: Low RDS(on) minimizes conduction losses and improves efficiency.
  • Improved system performance: Fast switching speed reduces switching losses and enhances system performance.
  • Robust design: Avalanche energy rating and hermetically sealed package ensure robust and reliable operation.
  • Extended operating life: Radiation hardening extends the operating life of the MOSFET in harsh environments.

Technical Specifications:

  • Voltage: 200 V
  • RDS(on): 0.35 Ω (typical)
  • Continuous Drain Current: 10 A (at 25°C)
  • Total Gate Charge: 25 nC (typical)
  • Operating Temperature: -55°C to +150°C
  • Package Type: TO-254AA
  • Radiation Hardness: Tested to specific radiation levels (Consult datasheet for details)

In summary, the JANSR2N7268 radiation-hardened MOSFET from Infineon (formerly International Rectifier) is a reliable and robust component suitable for applications requiring high reliability and resistance to radiation. Its features and benefits make it an excellent choice for spacecraft electronics, satellite systems, and other high-radiation environments.

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