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Same model may have multiple batches, images only for reference.
IXA37IF1200HJ Real Image
Same model may have multiple batches, images only for reference.

IXA37IF1200HJ

Part No IXA37IF1200HJ
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 58A 195W TO247 / IGBT PT 1200 V 58 A 195 W Through Hole ISOPLUS247™
Datasheet
IXA37IF1200HJ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer IXYS
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 58 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Power - Max 195 W
Switching Energy 3.8mJ (on), 4.1mJ (off)
Input Type Standard
Gate Charge 106 nC
Test Condition 600V, 35A, 27Ohm, 15V
Reverse Recovery Time (trr) 350 ns
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package ISOPLUS247™
Base Product Number IXA37IF1200
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1324005-IXA37IF1200HJ
Ultra Librarian 3D Model Ultra Librarian IXA37IF1200HJ CAD Model

Description

The IXYS IXA37IF1200HJ is a single IGBT transistor that is designed to handle a maximum power of 195 W.

  • Maximum Power: 195 W
  • Voltage Collector Emitter Breakdown: 1200 V
  • Current Collector: 58 A
  • IGBT Type: PT
  • Reverse Recovery Time: 350 ns
  • Switching Energy (on): 3.8mJ
  • Switching Energy (off): 4.1mJ
  • Gate Charge: 106 nC
  • Mounting: Through Hole
  • Package: TO-247-3
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • ROHS3 Compliant: Yes

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