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Same model may have multiple batches, images only for reference.
IXFA10N60P Real Image
Same model may have multiple batches, images only for reference.

IXFA10N60P

Part No IXFA10N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO263  /  N-Channel 600 V 10A (Tc) 200W (Tc) Surface Mount TO-263 (IXFA)
Datasheet
IXFA10N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXFA10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1007382-IXFA10N60P
Ultra Librarian 3D Model Ultra Librarian IXFA10N60P CAD Model

Description

The IXYS IXFA10N60P is a HiPerFET™ MOSFET transistor with a N-Channel and a maximum drain-source voltage of 600V.

  • Channel Type: N-Channel
  • Maximum Drain-Source Voltage: 600V
  • Maximum Gate-Source Voltage: ±30V
  • Input Capacitance: 1610pF @ 25V
  • Gate Charge: 32nC @ 10V
  • Maximum Power Dissipation: 200W
  • Package: TO-263-3, D²Pak
  • Mounting Type: SMD
  • Application: Power supplies and motor control

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