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IXFB50N80Q2

Part No IXFB50N80Q2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFETs Q-Class
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7200pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1135W (Tc)
Rds On (Maximum) @ Id, Vgs 160 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS264
Package TO-264-3, TO-264AA
RoHS State Request Verification
Win Source Part Number 1191038-IXFB50N80Q2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFB 50N80Q2
Introduction Date February 26, 2003
ECCN EAR99
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IXFB50N80Q2 CAD Model

Description

The IXYS HiPerFET IXFB50N80Q2 is an N-channel MOSFET with a maximum voltage rating of 800V and a maximum current rating of 50A.

  • Applications: Designed for use in applications requiring high power and high voltage, such as power supplies, motor drives, and inverters
  • Package: TO-264-3, TO-264AA package
  • Mounting: Through hole
  • Operating Temperature: -55°C to 150°C
  • Device Supplied: Tube package
  • Quantity: 1 per package
  • Family: IXFB 50N80Q2 family of MOSFETs from IXYS

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $38.2922 $76.5844
4+ $31.4193 $125.6772
5+ $30.4374 $152.1870
7+ $29.4556 $206.1892
9+ $28.4737 $256.2633
12+ $25.5282 $306.3384
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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