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Same model may have multiple batches, images only for reference.
IXFB72N55Q2 Real Image
Same model may have multiple batches, images only for reference.

IXFB72N55Q2

Part No IXFB72N55Q2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 72A PLUS264 / N-Channel 550 V 72A (Tc) 890W (Tc) Through Hole PLUS264™
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Q2 Class
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 258 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA
Base Product Number IXFB72
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 973787-IXFB72N55Q2
Ultra Librarian 3D Model Ultra Librarian IXFB72N55Q2 CAD Model

Description

The IXFB72N55Q2 is a HiPerFET™ Q2 Class N-Channel MOSFET transistor from IXYS that is specifically designed for discrete semiconductor products such as transistors, FETs, MOSFETs, and single devices.

  • Package: Tube
  • Standard Package: 25
  • MOSFET Technology: Yes
  • Drain to Source Voltage (Vdss): 550 V
  • Continuous Drain Current (Id) @ 25°C: 72A (Tc)
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 500mA, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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