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Same model may have multiple batches, images only for reference.
IXFH15N100Q3 Real Image
Same model may have multiple batches, images only for reference.

IXFH15N100Q3

Part No IXFH15N100Q3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 15A TO-247
Datasheet
IXFH15N100Q3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 6.5V @ 4mA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 3250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 690W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 141120-IXFH15N100Q3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFH15N100Q3 CAD Model

Description

The IXFH15N100Q3 is an N-channel MOSFET with a drain-source breakdown voltage of 1000V and a continuous drain current of 15A @ 25°C.

  • Power Dissipation: 690W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package: TO-247AD (IXFH)
  • Gate-Source Threshold Voltage: 6.5V @ 4mA
  • Maximum Gate Charge: 64nC @ 10V
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 15A @ 25°C

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