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Same model may have multiple batches, images only for reference.
IXFH24N90P Real Image
Same model may have multiple batches, images only for reference.

IXFH24N90P

Part No IXFH24N90P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-247
Datasheet
IXFH24N90P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 6.5V @ 1mA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 7200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 660W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049403-IXFH24N90P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH24N90P CAD Model

Description

The IXYS MOSFET is a high-performance electronic component that can be used in a variety of applications.

  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 24A
  • Polarity: N-Channel
  • Gate-Source Threshold Voltage: 6.5V @ 1mA
  • Maximum Gate Charge: 130nC @ 10V
  • Maximum Input Capacitance: 7200pF @ 25V
  • Maximum Rds On at Id,Vgs: 420 mOhm @ 12A, 10V
  • Package: TO-247AD (IXFH)
  • Dimension: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.3054 $61.5270
10+ $10.0968 $100.9680
16+ $9.7812 $156.4992
22+ $9.4657 $208.2454
28+ $9.1502 $256.2056
37+ $8.2036 $303.5332
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Availability: 1,463 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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