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Same model may have multiple batches, images only for reference.
IXFH26N60P Real Image
Same model may have multiple batches, images only for reference.

IXFH26N60P

Part No IXFH26N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
Datasheet
IXFH26N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 72nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4150pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 460W (Tc)
Rds On (Maximum) @ Id, Vgs 270 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AD (IXFH)
Package TO-247-3
Win Source Part Number 1191064-IXFH26N60P
Manufacturer Homepage www.ixys.com
Family Name IXFH26N60P
Introduction Date December 07, 2006
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH26N60P CAD Model

Description

The IXYS MOSFET is a high-power N-Channel MOSFET that is used in various applications.

  • Channel Type: N-Channel MOSFET
  • Manufacturer: IXYS
  • Voltage Rating: 600V
  • Current Rating: 26A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum Gate Charge: 72nC @ 10V
  • Package: TO-247-3
  • Mounting: Through-hole technology
  • Applications: Power supplies, motor control circuits, and other high-power electronic circuits

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