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Same model may have multiple batches, images only for reference.
IXFH30N50P Real Image
Same model may have multiple batches, images only for reference.

IXFH30N50P

Part No IXFH30N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 30A TO-247AD
Datasheet
IXFH30N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 4150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 460W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 205679-IXFH30N50P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFH30N50P CAD Model

Description

The IXYS IXFH30N50P MOSFET is a high-power N-channel transistor with a maximum power dissipation of 460W and a continuous drain current of 30A @ 25°C. IXYS

  • Maximum Power Dissipation: 460W
  • Continuous Drain Current: 30A @ 25°C
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Rds On: 200 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-247AD
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.7272 $53.1816
7+ $14.5454 $101.8178
11+ $14.0909 $154.9999
15+ $13.6364 $204.5460
19+ $13.1818 $250.4542
26+ $11.8182 $307.2732
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Availability: 87 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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