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Same model may have multiple batches, images only for reference.
IXFH40N30Q Real Image
Same model may have multiple batches, images only for reference.

IXFH40N30Q

Part No IXFH40N30Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 40A TO-247AD
Datasheet
IXFH40N30Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 3100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 80 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049428-IXFH40N30Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH40N30Q CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power MOSFET designed for use in a variety of applications.

  • Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 40A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 4mA
  • Package: TO-247AD (IXFH)
  • Mounting: Through Hole
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id,Vgs: 80 mOhm @ 500mA, 10V
  • Supply and Demand: Sufficient

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