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IXFH48N60X3 IXYS
Same model may have multiple batches, images only for reference.

IXFH48N60X3

Part No IXFH48N60X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET ULTRA JCT 600V 48A TO247 / N-Channel 600 V 48A (Tc) 520W (Tc) Through Hole TO-247
Datasheet
IXFH48N60X3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2730 pF @ 25 V
FET Feature -
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number IXFH48
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355079-IXFH48N60X3
Ultra Librarian 3D Model Ultra Librarian IXFH48N60X3 CAD Model

Description

The IXFH48N60X3 is a single N-channel MOSFET transistor from the HiPerFET™, Ultra X3 series manufactured by IXYS.

  • Discrete Semiconductor Products: Transistor
  • Temperature Range: -55°C to 150°C
  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 48A
  • On-Resistance: 65mOhm @ 24A and 10V gate-source voltage
  • Gate Charge: 38nC
  • Maximum Gate-Source Voltage: ±20V
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • REACH: Unaffected
  • ECCN: EAR99

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