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IXFH50N60X

Part No IXFH50N60X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 50A TO247 / N-Channel 600 V 50A (Tc) 660W (Tc) Through Hole TO-247 (IXTH)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 73mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4660 pF @ 25 V
Power Dissipation (Max) 660W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247 (IXTH)
Case / Package TO-247-3
Base Product Number IXFH50
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1324558-IXFH50N60X
Ultra Librarian 3D Model Ultra Librarian IXFH50N60X CAD Model

Description

The IXFH50N60X is a MOSFET (Metal Oxide) transistor manufactured by IXYS.

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 73mOhm @ 25A, 10V
  • Power Dissipation (Max): 660W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247 (IXTH)
  • Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V
  • Vgs (Max): ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.1561 $60.6244
10+ $12.4358 $124.3580
15+ $12.0471 $180.7065
20+ $11.6586 $233.1720
26+ $11.2700 $293.0200
35+ $10.1041 $353.6435
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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