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Same model may have multiple batches, images only for reference.
IXFH58N20Q Real Image
Same model may have multiple batches, images only for reference.

IXFH58N20Q

Part No IXFH58N20Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 58A TO-247AD
Datasheet
IXFH58N20Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049439-IXFH58N20Q
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian IXFH58N20Q CAD Model

Description

The IXFH58N20Q is a MOSFET N-Channel transistor manufactured by IXYS.

  • Maximum Power Dissipation: 300W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 58A (Tc) @ 25°C
  • Maximum Rds on: 40 mOhm @ 29A, 10V
  • Gate-Source Threshold Voltage: 4V @ 4mA
  • Maximum Gate Charge: 140nC @ 10V
  • Maximum Input Capacitance: 3600pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-247AD (IXFH)
  • Mounting: Through Hole
  • Applications: Industrial

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.0356 $63.2492
16+ $7.4139 $118.6224
25+ $7.1829 $179.5725
34+ $6.9508 $236.3272
43+ $6.7198 $288.9514
58+ $6.0245 $349.4210
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Availability: 29,900 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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