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IXFH69N30P Real Image IXFH69N30P Real Image
Same model may have multiple batches, images only for reference.
IXFH69N30P Real Image IXFH69N30P Real Image
IXFH69N30P Real Image IXFH69N30P Real Image
Same model may have multiple batches, images only for reference.

IXFH69N30P

Part No IXFH69N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 69A TO-247
Datasheet
IXFH69N30P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 4960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 49 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049446-IXFH69N30P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH69N30P CAD Model

Description

The IXYS IXFH69N30P from IXYS is a MOSFET technology N-Channel device that has a drain-source breakdown voltage of 300V.

  • Continuous Drain Current: 69A (Tc) @ 25°C
  • Maximum Rds On: 49 mOhm @ 500mA, 10V
  • Gate-Source Threshold Voltage: 5V @ 4mA
  • Max Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 4960pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-247AD (IXFH)
  • Dimension: TO-247-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Tube/Rail

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Quantity Unit Price Ext. Price
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12+ $10.4889 $125.8668
18+ $10.1612 $182.9016
24+ $9.8334 $236.0016
31+ $9.5057 $294.6767
41+ $8.5223 $349.4143
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