The IXFK100N65X2 is a HiPerFET™ Ultra X2 MOSFET (Metal Oxide) transistor with a FET Type of N-Channel.

• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id: 5.5V @ 4mA
• Power Dissipation (Max): 1040W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
• Mounting: Through hole
• Package/Case: TO-264-3, TO-264AA
• Temperature Range: -55°C ~ 150°C (TJ)
• Manufacturer: IXYS