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Same model may have multiple batches, images only for reference.
IXFK120N20 Real Image
Same model may have multiple batches, images only for reference.

IXFK120N20

Part No IXFK120N20
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 120A TO-264AA / Trans MOSFET N-CH Si 200V 120A 3-Pin(3+Tab) TO-264AA
Datasheet
IXFK120N20 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9100pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 560W (Tc)
Rds On (Maximum) @ Id, Vgs 17 mOhm @ 60A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264AA (IXFK)
Package TO-264-3, TO-264AA
Win Source Part Number 777616-IXFK120N20
Popularity Medium
Supply and Demand Status Limited
Family Name IXFK120N20
Introduction Date January 13, 2003
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IXFK120N20 CAD Model

Description

The IXFK120N20 is a N-Channel MOSFET transistor designed for use in Discrete Semiconductor Products - Transistors - FETs, MOSFETs, manufactured by IXYS.

  • Series: HiPerFET
  • Drain to Source Voltage (Vdss): 200V
  • Power Dissipation (Max) @ Tc: 560W
  • Package Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Gate-Source Voltage (Vgs): ±20V
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 60A, 10V

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Quantity Unit Price Ext. Price
1+ $55.7142 $55.7142
3+ $45.7143 $137.1429
4+ $44.2857 $177.1428
5+ $42.8571 $214.2855
7+ $41.4286 $290.0002
9+ $37.1428 $334.2852
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