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IXFK30N100Q2

Part No IXFK30N100Q2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 30A TO-264
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 8mA
Max Gate Charge 186nC @ 10V
Max Input Capacitance 8200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 735W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-264AA (IXFK)
Dimension TO-264-3, TO-264AA
Win Source Part Number 1049474-IXFK30N100Q2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFK30N100Q2 CAD Model

Description

The IXYS IXFK30N100Q2 is an N-channel MOSFET with a drain-source breakdown voltage of 1000V and a maximum continuous drain current of 30A @ 25°C.

  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 8mA
  • Maximum Rds On: 400 mOhm @ 15A and 10V
  • Package: TO-264AA
  • Maximum Gate Charge: 186nC @ 10V
  • Maximum Input Capacitance: 8200pF @ 25V
  • Applications: Power supplies, motor control, and inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $170.8099 $170.8099
2+ $165.1163 $330.2326
3+ $148.0352 $444.1056
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Availability: 28 pieces
Order Increment : 1 pcs
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