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IXFK36N60P

Part No IXFK36N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 36A TO-264
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 102nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 650W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-264AA (IXFK)
Dimension TO-264-3, TO-264AA
Win Source Part Number 144011-IXFK36N60P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK36N60P CAD Model

Description

The IXFK36N60P is an N-Channel MOSFET from IXYS that has a drain-source breakdown voltage of 600V and a continuous drain current of 36A (Tc) @ 25°C.

  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 190 mOhm @ 18A, 10V
  • Drive Voltage: 10V
  • Maximum Gate Charge: 102nC @ 10V
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $28.8889 $57.7778
5+ $23.7038 $118.5190
7+ $22.9630 $160.7410
9+ $22.2223 $200.0007
12+ $21.4815 $257.7780
16+ $19.2593 $308.1488
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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