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Same model may have multiple batches, images only for reference.
IXFK55N50 Real Image
Same model may have multiple batches, images only for reference.

IXFK55N50

Part No IXFK55N50
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerRF Power MOSFETs
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 330nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9400pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 625W (Tc)
Rds On (Maximum) @ Id, Vgs 90 mOhm @ 27.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264AA (IXFK)
Package TO-264-3, TO-264AA
Win Source Part Number 1191100-IXFK55N50
Manufacturer Homepage www.ixys.com
Family Name IXFK 55N50
Introduction Date April 01, 1999
ECCN EAR99
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Quantity per package 25
Ultra Librarian 3D Model Ultra Librarian IXFK55N50 CAD Model

Description

The IXYS HiPerFET MOSFET is the perfect solution for your discrete semiconductor needs.

  • Mounting Style: Through-Hole
  • Package: TO-264-3 and TO-264AA
  • Power Dissipation (Tc): 625W
  • Continuous Drain Current (Id) (Tc) @ 25°C: 55A
  • Gate Charge (Qg) (maximum) @ Vgs: 330nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 9400pF @ 25V
  • Vgs(th) (maximum) @ Id: 4.5V @ 8mA
  • Drain-Source Voltage: 500V
  • Channel Type: N
  • Introduction Date: April 01, 1999
  • ECCN: EAR99
  • Estimated EOL Date: Obsolete
  • Package Quantity: 25

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