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Same model may have multiple batches, images only for reference.
IXFN24N100F Real Image
Same model may have multiple batches, images only for reference.

IXFN24N100F

Part No IXFN24N100F
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerRF Power MOSFETs
Datasheet
IXFN24N100F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerRF
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 195nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6600pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 600W (Tc)
Rds On (Maximum) @ Id, Vgs 390 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Manufacturer Package SOT-227B
Package SOT-227-4, miniBLOC
Win Source Part Number 1191113-IXFN24N100F
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFN24N100F
Introduction Date January 18, 2002
ECCN EAR99
Halogen Free Unknown
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXFN24N100F CAD Model

Description

IXFN24N100F is an N-channel MOSFET transistor from IXYS with a HiPerRF series.

  • Drain-Source Voltage: 1000V
  • Continuous Drain Current: 24A @ 25°C
  • Rds On: 390 mOhm @ 12A and 10V
  • Gate Charge: 195nC @ 10V
  • Input Capacitance: 6600pF @ 25Vds
  • Power Dissipation: 600W @ Tc
  • Maximum Vgs: ±20V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: SOT-227-4 and miniBLOC
  • Ideal For: High power applications such as power supplies, motor control, and lighting systems

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5+ $25.6676 $128.3380
7+ $24.8648 $174.0536
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13+ $23.2605 $302.3865
17+ $20.8547 $354.5299
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