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IXFN300N10P

Name: IXFN300N10P
Brand: IXYS
SKU: 608426
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFN300N10P
Manufacturer	IXYS
Catalog	FETs - Single
Description	Polar Power MOSFET HiPerFET \| MOSFET N-CH 100V 295A SOT-227
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	295A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	5.5mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id	5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	279nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	23000pF at 25V
Power Dissipation (Maximum)	1070W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Chassis Mount
Supplier Device Package	SOT-227B
Manufacturer Package	SOT-227-4, miniBLOC
Manufacturer Pack Quantity	10
MSL Level	1 (Unlimited)
Win Source Part Number	1191114-IXFN300N10P
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFN300N10P CAD Model

Alternative Products

Description

The IXYS IXFN300N10P is a high-performance N-channel MOSFET transistor that features a drain-source breakdown voltage of 100V and a continuous drain current of 295A.

Product Name: IXFN300N10P
Manufacturer: IXYS
Transistor Type: N-channel MOSFET
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 295A
On-State Resistance: 5.5mOhm maximum
Gate-Source Voltage: 5V @ 8mA
Package: SOT-227B
Mounting Type: Chassis
Application: Discrete semiconductor product applications

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