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Same model may have multiple batches, images only for reference.
IXFN360N10T Real Image
Same model may have multiple batches, images only for reference.

IXFN360N10T

Part No IXFN360N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description GigaMOS Trench HiperFET Power MOSFET
Datasheet
IXFN360N10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 360A
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 505nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 36000pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 830W (Tc)
Rds On (Maximum) @ Id, Vgs 2.6 mOhm @ 180A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Chassis Mount
Manufacturer Package SOT-227B
Package SOT-227-4, miniBLOC
Win Source Part Number 1191116-IXFN360N10T
Manufacturer Homepage www.ixys.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IXFN360N10T
Introduction Date February 02, 2009
ECCN EAR99
Country of Origin Philippines, Republic of Korea
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXFN360N10T CAD Model

Description

The IXFN360N10T is a MOSFET transistor designed for use in Discrete Semiconductor Products from IXYS.

  • Channel Type: N-Channel
  • Drain Source Voltage: 100V
  • Maximum Power Dissipation: 830W (Tc)
  • Package: SOT-227-4, miniBLOC
  • Supplied in: Tube
  • Series: HiPerFET
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Drive Voltage: 10V

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