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IXFN60N60

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Part No	IXFN60N60
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 60A SOT-227B / N-Channel 600 V 60A (Tc) 700W (Tc) Chassis Mount SOT-227B
Datasheet	IXFN60N60 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer	IXYS
Packaging	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	75mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	380 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 25 V
Power Dissipation (Max)	700W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	Chassis Mount
Supplier Device Package	SOT-227B
Case / Package	SOT-227-4, miniBLOC
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Part Number	IXFN60N60-NDR
Standard Package	10
Win Source Part Number	1323880-IXFN60N60
Ultra Librarian 3D Model	Ultra Librarian IXFN60N60 CAD Model

Alternative Products

Description

The IXYS IXFN60N60 is a N-channel MOSFET transistor that comes in a SOT-227B package.

Manufacturer: IXYS
Drain to Source Voltage: 600V
Continuous Drain Current @ 25°C: 60A
Maximum On-Resistance: 75mOhm @ 500mA and 10V
Gate Charge: 380nC @ 10V
Input Capacitance: 15000pF @ 25V
Power Dissipation @ Tc: 700W
Package: SOT-227B
Ideal for: chassis mount applications.

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IXFN60N60

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