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Same model may have multiple batches, images only for reference.
IXFN70N120SK Real Image
Same model may have multiple batches, images only for reference.

IXFN70N120SK

Part No IXFN70N120SK
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 68A SOT227B / N-Channel 1200 V 68A (Tc) Chassis Mount SOT-227B
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id 4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 20 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2790 pF @ 1000 V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN70
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 999730-IXFN70N120SK
Ultra Librarian 3D Model Ultra Librarian IXFN70N120SK CAD Model

Description

The IXFN70N120SK is a power MOSFET transistor manufactured by IXYS.

  • Type: N-channel
  • Maximum Drain-Source Voltage: 1200V
  • Maximum Continuous Drain Current: 68A
  • On-Resistance: 34mOhm @ 50A and 20V
  • Technology: SiCFET (Silicon Carbide)
  • Mount: Chassis Mount
  • Package: SOT-227-4, miniBLOC
  • RoHS: Compliant

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1+ $192.5004 $192.5004
2+ $186.0844 $372.1688
3+ $166.8340 $500.5020
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