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IXFP12N50PM

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Part No	IXFP12N50PM
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 6A TO220AB / N-Channel 500 V 6A (Tc) 50W (Tc) Through Hole TO-220-3
Datasheet	IXFP12N50PM Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Polar
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1830 pF @ 25 V
Power Dissipation (Max)	50W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	IXFP12
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50
Win Source Part Number	1224632-IXFP12N50PM
Ultra Librarian 3D Model	Ultra Librarian IXFP12N50PM CAD Model

Alternative Products

Description

The IXFP12N50PM is a HiPerFET™, Polar N-Channel MOSFET designed for use in discrete semiconductor products like transistors and FETs.

Vdss: 500 V
Id @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Package Type: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Operating Temperature: -55°C to 150°C (TJ)
ECCN: EAR99
MSL Level: 1 (Unlimited)
ROHS3 Compliant: Yes

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IXFP12N50PM

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