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IXFP36N60X3

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Part No	IXFP36N60X3
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET ULTRA JCT 600V 36A TO220 / N-Channel 600 V 36A (Tc) 446W (Tc) Through Hole TO-220
Datasheet	IXFP36N60X3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	HiPerFET™, Ultra X3
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2030 pF @ 25 V
Power Dissipation (Max)	446W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	238-IXFP36N60X3
Standard Package	50
Win Source Part Number	1118943-IXFP36N60X3
Ultra Librarian 3D Model	Ultra Librarian IXFP36N60X3 CAD Model

Alternative Products

Description

The IXFP36N60X3 is an N-Channel MOSFET transistor manufactured by IXYS.

Series: HiPerFET™, Ultra X3
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 446W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Through-Hole
Package/Case: TO-220-3
Supplier Device Package: TO-220
ECCN: EAR99
REACH: Unaffected
HTSUS Code: 8541.29.0095
MSL Level: 1 (Unlimited)

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